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1 February 1991 InGaAs/InP monolithic photoreceivers for 1.3-1.5 um optical fiber transmission
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24510
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The sensitivity of InGaAsIInP monolithic photoreceivers for 1 . 3 - 1. 5 . tm has been largely improved in recent years now reaching the sensitivity figures of hybrid InGaAs pin/GaAs MESFET receivers. The characteristics of an integrated InGaAsfJnP pin-JFET front-end based on MBE growth and diffused junctions are analysed. The results are used to illustrate some pending problems oflnGaAs FETs requiring future improvement.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andre Scavennec, M. Billard, P. Blanconnier, E. Caquot, P. Carer, Louis Giraudet, L. Nguyen, F. Lugiez, and Jean-Pierre Praseuth "InGaAs/InP monolithic photoreceivers for 1.3-1.5 um optical fiber transmission", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24510
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