Translator Disclaimer
Paper
1 February 1991 Nonlinear optical gain in InGaAs/InGaAsP quantum-wells
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24481
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
InGaAs/InGaAsP-multi-quantum--well-layers are preferably used as the active region in long-wavelength semiconductor lasers. In this work we present calculations of their optical gain in dependence of the carrier density . These calculations are compared with measurements of electrically and optically excited gain spectra of such laser structures for 1. SSim emission wavelength with different numbers of wells. In contrast to conventional double heterostructure lasers a distinct sublinear increase of the gain g with increasing carrier densities N is observed which is well pronounced for low well numbers and can be described approximately with a logarithmic equation g''''ln(N) quite in accordance with theoretical predictions.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Rosenzweig, M. Moehrle, H. Dueser, M. Tischel, R. Heitz, and Axel Hoffmann "Nonlinear optical gain in InGaAs/InGaAsP quantum-wells", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24481
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
Back to Top