Optimization of reflection electro-absorption modulators

Bardia Pezeshki; Dominique Thomas; James S. Harris Jr.

doi:10.1117/12.24565

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1 February 1991 Optimization of reflection electro-absorption modulators

Bardia Pezeshki, Dominique Thomas, James S. Harris Jr.

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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24565
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Characteristics of reflection electroabsorption modulators such as insertion loss and contrast ratio are discussed in terms of the absorption changes. Ultimate performances and simple design equations are derived. Both InGaAs/GaAs and GaAs/AlGaAs modulators were fabricated according to the designs rules; the modulators exhibit state-of-the-art performances. For the GaAs/AlGaAs device, a reflection change of 66 percent at 5 V operating voltage was achieved with a 1.2 dB insertion loss.

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Bardia Pezeshki, Dominique Thomas, and James S. Harris Jr. "Optimization of reflection electro-absorption modulators", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24565

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