Performances of gallium arsenide on silicon substrate photoconductive detectors

Monique T. Constant; Luc Boussekey; Didier J. Decoster; Jean-Pierre Vilcot

doi:10.1117/12.24538

1 February 1991 Performances of gallium arsenide on silicon substrate photoconductive detectors

Monique T. Constant, Luc Boussekey, Didier J. Decoster, Jean-Pierre Vilcot

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24538
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Planar photoconductors made with GaAs on silicon substrate have been studied with respect to static and dynamic responsivities as well as noise levels in the 1 Hz - 100 kHz frequency range. The results obtained have led to the determination of the specific detectivity which in turn is compared to those of GaAs planar photoconductors and Si photodiodes.

Citation Download Citation

Monique T. Constant, Luc Boussekey, Didier J. Decoster, and Jean-Pierre Vilcot "Performances of gallium arsenide on silicon substrate photoconductive detectors", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24538

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