Recent progress in device-oriented II-VI research at the University of Wuerzburg

Gottfried Landwehr; Andreas Waag; K. Hofmann; Norbert Kallis; Robert N. Bicknell-Tassius

doi:10.1117/12.24507

1 February 1991 Recent progress in device-oriented II-VI research at the University of Wuerzburg

Gottfried Landwehr, Andreas Waag, K. Hofmann, Norbert Kallis, Robert N. Bicknell-Tassius

Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24507
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Interest in CdTe field effect transistors and multi-gated devices stems from the fact that CdTe is lattice matched to HgCdTe. As a consequence it may be possible to develop a monolithic technology that combines HgCdTe infrared focal plane arrays with on-board signal processing based on CdTe devices. Although CdTe metal-semiconductor field effect transistors have only recently been fabricated rapid improvement in device performance has been achieved. All the devices reported have been fabricated from CdTe:In epilayers grown by Photoassisted Molecular Beam Epitaxy. We report on devices having gold Schottky barrier with reverse breakdown voltages as high as 28. 0 V and ideality factors near 1. 7. These MESFETs exhibit good depleting mode action.

Citation Download Citation

Gottfried Landwehr, Andreas Waag, K. Hofmann, Norbert Kallis, and Robert N. Bicknell-Tassius "Recent progress in device-oriented II-VI research at the University of Wuerzburg", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24507

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