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1 February 1991 Wave-function engineering in Si-Ge microstructures: linear and nonlinear optical response
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Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24527
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
The structural criteria for achieving the optimum linear and nonlinear optical response in Si-Ge superlattices is developed based on pseudopotential calculations and experimental data. A direct band gap is identified in Si(m)-Ge(n) superlattices for the condition at which m + n
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Milan Jaros and Richard M. Turton "Wave-function engineering in Si-Ge microstructures: linear and nonlinear optical response", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24527
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