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1 March 1991 Subnanosecond, high-voltage photoconductive switching in GaAs
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Proceedings Volume 1378, Optically Activated Switching; (1991)
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States
We are conducting research on the switching properties of photoconductive materials to explore their potential for generating highpower microwaves (HPM) and for high reprate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanchelike mode (the optical pulse only controls switch closing) . Operating in the unear mode we have observed switch closing times of less than 200 Ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lockon modes high fields are switched with lower laser pulse energies resulting in higher efficiencies but with measurable switching delay and jitter. We are currently investigating both large area (1 cm2) and small area 1 mm2) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1. 06 tim.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert L. Druce, Michael D. Pocha, Kenneth L. Griffin, and Jim O'Bannon "Subnanosecond, high-voltage photoconductive switching in GaAs", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991);

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