Paper
1 April 1991 Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure
Richard A. Soref, Fereydoon Namavar, Elisabetta Cortesi, Lionel R. Friedman, Richard Lareau
Author Affiliations +
Abstract
We have built and tested new multiple-layer silicon optical waveguide structures that have applications in wafer-scale optical interconnects. A repeated sequence of oxygen implantation annealing and Si epitaxy was used to make 5-layer or 6-layer structures containing a pair of 2- jim-thick Si waveguide cores separated by 1200A or 3700A of Si02. Coupled or uncoupled dual waveguiding at 1. 3 xm was observed. Inter-guide coupling for this stacked 3-D structure is analyzed here. Applications to all-silicon guided-wave optical interconnects are discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Soref, Fereydoon Namavar, Elisabetta Cortesi, Lionel R. Friedman, and Richard Lareau "Vertical 3-D integration of silicon waveguides in a Si-SiO2-Si-SiO2-Si structure", Proc. SPIE 1389, Microelectronic Interconnects and Packages: Optical and Electrical Technologies, (1 April 1991); https://doi.org/10.1117/12.25543
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Waveguides

Optical interconnects

Annealing

Epitaxy

Oxygen

Back to Top