Influence of laser pulse annealing on the depth distribution of Sb recoil atoms in Si

Irena Brylowska; K. Paprocki

doi:10.1117/12.57188

1 August 1991 Influence of laser pulse annealing on the depth distribution of Sb recoil atoms in Si

Irena Brylowska, K. Paprocki

Proceedings Volume 1391, Laser Technology III; (1991) https://doi.org/10.1117/12.57188
Event: Laser Technology III, 1990, Szczecin, Poland

Abstract

Using Ruby and Nd: glass lasers an influence of laser annealing on the dept.h distribution of Sb recoil at.oms in Si was studied. The recoil implant.at.ion of Sb at.oms in Si was carried out. in a Sb-Si bilayer system usini. 100keV Ar ions or 320keV Xe ions and doses ranging fom 5 x 10 i/cm2 to 5 x 1014i/cm2 • The depth distributions of Sb recoil at.oms were obtained from Rutherford backseat.taring spectra CRBS) measurements. The substitutional fraction of Sb at.oms was 0.35 0.55 in the case of laser annealed samples.

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Irena Brylowska and K. Paprocki "Influence of laser pulse annealing on the depth distribution of Sb recoil atoms in Si", Proc. SPIE 1391, Laser Technology III, (1 August 1991); https://doi.org/10.1117/12.57188

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