Etch tailoring through flexible end-point detection

David Angell; Gottleib S. Oehrlein

doi:10.1117/12.48947

1 March 1991 Etch tailoring through flexible end-point detection

David Angell, Gottleib S. Oehrlein

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48947
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Accurate measurement in-situ and in real-time of film thickness during Reactive Ion Etching (THE) can lead to new levels of process control. The two techniques described are used to stop an etch close to an interface less than 5Onm and have an accuracy of 3nm and 8nm respectively. The long term goal etch tailoring depends on pin-pointing in real-time the film remaining to be etched. With etch tailoring process parameters can be changed to improve product quality.

Citation Download Citation

David Angell and Gottleib S. Oehrlein "Etch tailoring through flexible end-point detection", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48947

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