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1 April 1991 Analysis of temperature distribution and slip in rapid thermal processing
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Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991)
Event: Processing Integration, 1990, Santa Clara, CA, United States
A numerical solution of temperature and thermally induced stress in a wafer during rapid thermal processing(R. T. P) is obtained and an analysis of onset of slip is performed. Some results are compared with experiment. In this R. T. P system one side of threeinch silicon wafer is irradiated steadily for 1015 sec in the temperature rangefrom 1100 to 1150 OC by using tungsten halogen lamp as the heat source. In order to obtain the temperature distribution of a wafer in R. T. P system twodimensional heat conduction equation that incorporates radiative and convective heat transfer is proposed and the equation is solved numerically using alternating direction implicit(A. D. I) method. In dealing with the. radiative heat transfer a partially transparent body that absorbs the radiation energy is assumed and this partially transparent body undergoes multiple internal reflections and absorptions. Twodimensional (assuming plane stress and anisotropy) thermoelastic constitutive equation is used to calculate the thermal stress induced in a wafer and a finite element method is employed to solve the equation numerically. In order to predict the slip the stress resolved on the slip planes in the slip directions of silicon is compared with the yield stress of silicon which is the function of strain rate temperature and initial dislocation density. The numerical result shows that the wafer temperature at which slip occurs is affected by the heating rate of the
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Hyouk Lee, Young-Don Yoo, Hyun-Dong Shin, Youn Young Earmme, and Choong-Ki Kim "Analysis of temperature distribution and slip in rapid thermal processing", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991);

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