Low-temperature in-situ dry cleaning process for epitaxial layer multiprocessing

Mehrdad M. Moslehi

doi:10.1117/12.48969

1 April 1991 Low-temperature in-situ dry cleaning process for epitaxial layer multiprocessing

Mehrdad M. Moslehi

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.48969
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

A low-temperature (600-750C) dry surface cleaning process has been developed for in-situ removal of native oxide layers and other surface contaminants. The cleaning process chemistry consists of a mixture of germane (Ge114) and hydrogen (112) gases with very low germane-tohydrogen flow ratio (10-20 ppm). The process parameters (e. g. temperature pressure and CeH4:H2 gas flow ratio) were adjusted in order to prevent deposition or surface nucleation of germanium during the thermal cleaning process and to minimize the stacking fault densities in the epitaxial silicon layers deposited following the in-situ germane-assisted cleaning steps. The insitu dry surface cleaning processes developed in this work also include associated Ge114/112-based chemistries with a halogen-containing additive gas such as llCl and/or HF. These surface cleaning processes can be easily integrated with various thin film growth and deposition processes such as epitaxial growth gate dielectric formation and polycrystalline or amorphous silicon deposition for MOS and bipolar device fabrication.

Citation Download Citation

Mehrdad M. Moslehi "Low-temperature in-situ dry cleaning process for epitaxial layer multiprocessing", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.48969

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