Multiple photo-assisted CVD of thin-film materials for III-V device technology

Yves I. Nissim; Jean Marie Moison; Francoise Houzay; F. Lebland; C. Licoppe; M. Bensoussan

doi:10.1117/12.25707

1 April 1991 Multiple photo-assisted CVD of thin-film materials for III-V device technology

Yves I. Nissim, Jean Marie Moison, Francoise Houzay, F. Lebland, C. Licoppe, M. Bensoussan

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25707
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

New chemical vapor deposition (CVD) processes controlled by light irradiation are studied and applied to 111-V semiconductor device technology. The interactions between the incident photons of and the gas-substrate system are either photolytic (UV lamps) or pyrolytic (JR lamps). In the first case the process is cold and in the second one it produces fast thermal ramping. The technique is thus compatible in both cases with the fragile semiconductor substrate and it allows in-situ processing. We report here a set ofresults involving surface and interface studies in order to prepare the deposition of thin film materials and thin dielectric film deposition using " flash" CVD or UVCVD. The aim of this work is to propose alternative technologies for Ill-V semiconductors. 1 .

Citation Download Citation

Yves I. Nissim, Jean Marie Moison, Francoise Houzay, F. Lebland, C. Licoppe, and M. Bensoussan "Multiple photo-assisted CVD of thin-film materials for III-V device technology", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25707

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