Paper
1 March 1991 Superconducting YBa2Cu3O7 films on Si and GaAs with conducting indium tin oxide buffer layers
Jonathan H. James, Bruce J. Kellett, Andrea Gauzzi, Benjamin Dwir, Davor Pavuna
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Abstract
Superconducting YBa2Cu3O7-delta (YBCO) thin films have been grown in situ by ion beam sputtering on Si and GaAs substrates with intermediate, conducting Indium Tin Oxide (ITO) buffer layers. Uniform, textured YBCO films on ITO exhibit Tc onset at 92K and Tc0 at 68K and 60K on Si and GaAs substrates respectively, the latter value is the highest Tc reported on GaAs. YBCO/ITO films exhibit metallic resistivity behavior. In situ YBCO films on SrTiO3 show Tc onset = 92K and Tc0 = 90.5K, transition widths are less than 1K. A simple optical bolometer has been constructed from YBCO films on SrTiO3. Tunnelling measurements have also been carried out using the first YBCO-Pb window-type tunnel junctions.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jonathan H. James, Bruce J. Kellett, Andrea Gauzzi, Benjamin Dwir, and Davor Pavuna "Superconducting YBa2Cu3O7 films on Si and GaAs with conducting indium tin oxide buffer layers", Proc. SPIE 1394, Progress In High-Temperature Superconducting Transistors and Other Devices, (1 March 1991); https://doi.org/10.1117/12.25731
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KEYWORDS
Superconductors

Silicon

Gallium arsenide

Ion beams

Thin films

Oxygen

Sputter deposition

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