Paper
1 February 1991 Resonant IR laser-induced diffusion of oxygen in silicon
M. V. Artsimovich, A. N. Baranov, V. V. Krivov, Eugene M. Kudriavtsev, Emma N. Lotkova, B. H. Makeev, I. F. Mogilnik, V. N. Pavlovich, B. N. Romanuk, V. I. Soroka, V. V. Tokarevski, Sergey D. Zotov
Author Affiliations +
Proceedings Volume 1397, 8th Intl Symp on Gas Flow and Chemical Lasers; (1991) https://doi.org/10.1117/12.26001
Event: Eighth International Symposium on Gas-Flow and Chemical Lasers, 1990, Madrid, Spain
Abstract
The analysis of experimental data on resonant IR laser-induced diffusion of oxygen in silicon are presented in this work.Resonant irradiation leads to the increase of oxygen diffusion coefficient which corresponds to increase of effective temperature of the crystal approximately by three times. The control experiments included changing of laser emission wave length (10.6 and 5 mkm instead of 9.2 mkm) and turning of direction of electric vector oscillation of plane polarized laser light.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. V. Artsimovich, A. N. Baranov, V. V. Krivov, Eugene M. Kudriavtsev, Emma N. Lotkova, B. H. Makeev, I. F. Mogilnik, V. N. Pavlovich, B. N. Romanuk, V. I. Soroka, V. V. Tokarevski, and Sergey D. Zotov "Resonant IR laser-induced diffusion of oxygen in silicon", Proc. SPIE 1397, 8th Intl Symp on Gas Flow and Chemical Lasers, (1 February 1991); https://doi.org/10.1117/12.26001
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Cited by 4 scholarly publications.
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KEYWORDS
Oxygen

Diffusion

Absorption

Silicon

Semiconductor lasers

Chemical species

Infrared lasers

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