Sputtering By Plasma-Enriched Deposition For Thin Film Applications

George Garfield

doi:10.1117/12.956278

26 September 1978 Sputtering By Plasma-Enriched Deposition For Thin Film Applications

George Garfield

Proceedings Volume 0140, Optical Coatings: Applications and Utilization II; (1978) https://doi.org/10.1117/12.956278
Event: 1978 Technical Symposium East, 1978, Washington, D.C., United States

Abstract

Since the introduction of commercial sputtering equipment in 1 964 both users and manufacturers have made significant, if not spectacular, contributions to the development of the technology. The Symposia cosponsored by Consolidated Vacuum Corporation and the University of Rochester in 1966, 1967 and 1969 represent a composite of most of the early work that was done. The earliest equipment configurations available and in use were D. C. in both the diode and triode modes. These were followed by the introduction of R. F. in both modes for the deposition of dielectric materials. Although applications work was initially undertaken by people in a number of industries, ultimately the greatest progress came from the microelectrics industry. While some applications work continued in the optical, decorative and solid film lubricants fields, the disadvantages of sputtering continued to outweigh its advantages. A number of unrelated events occurring over the last several years however, has created a new burst of interest and enthusiasm for sputtering as a thin film deposition technique. Magnetically enhanced sputtering is central to this vitalization. A brief review of the development of sputtering is followed by an indepth discussion of magnetically enhanced sputte ring; its advantages, disadvantages and application opportunities.

Citation Download Citation

George Garfield "Sputtering By Plasma-Enriched Deposition For Thin Film Applications", Proc. SPIE 0140, Optical Coatings: Applications and Utilization II, (26 September 1978); https://doi.org/10.1117/12.956278

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