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1 July 1991 GaAs/GaAlAs integrated optoelectronic transmitter for microwave applications
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Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43832
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
A monolithically integrated optoelectronic transmitter is being developed for wideband microwave-modulated links. The transmitter is designed to operate at signal frequencies of several gigahertz. It combines a GaAs/GaAlAs ridge-waveguide laser with a GaAs MESFET driver circuit. The laser has one of its cavity mirrors formed by dry etching so that the die size of the transmitter is not limited to the laser cavity length. The single-stage driver circuit is matched to both the low impedance of the laser and the 50 (Omega) microwave input by the inclusion of reactive components. A single-growth, vertically integrated material structure is used. Potential step-coverage problems that might result from this vertical integration are avoided by the use of air-bridge connections. The submicrometer FET gates are formed by direct-write electron-beam lithography.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel Yap, Authi A. Narayanan, Steven E. Rosenbaum, Chia-Shing Chou, W. W. Hooper, R. Wong Quen, and Robert H. Walden "GaAs/GaAlAs integrated optoelectronic transmitter for microwave applications", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43832
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