Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser

Y. J. Yang; Thaddeus G. Dziura; S. C. Wang; Mr. Rowell Fernandez; G. Du; Shyh Wang

doi:10.1117/12.43836

1 July 1991 Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser

Y. J. Yang, Thaddeus G. Dziura, S. C. Wang, Mr. Rowell Fernandez, G. Du, Shyh Wang

Author Affiliations +

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43836
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

A GaAs single quantum well mushroom structure surface emitting laser with a threshold current as low as 1.6 mA and a large output power of 2.0 mW operating at continuous wave (CW) room temperature condition is reported. The sample was grown by molecular beam epitaxy (MBE) and mainly consisted of a 300 $ANS GaAs single quantum well as an active layer cladded by two AlAs/Al0.1Ga0.9As multilayers as the top and bottom mirrors. The devices were fabricated by chemical mesa etching and undercutting to form a mushroom structure. A low series resistance of 250 ohms was obtained on devices with a 10 X 10 micrometers 2 constricted active region using a selective zinc diffusion. The laser operated at 860 nm with a spectral linewidth of approximately 0.5 angstroms.

Citation Download Citation

Y. J. Yang, Thaddeus G. Dziura, S. C. Wang, Mr. Rowell Fernandez, G. Du, and Shyh Wang "Low-threshold room temperature continuous-wave operation of a GaAs single-quantum-well mushroom structure surface-emitting laser", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43836

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