Novel distributed feedback structure for surface-emitting semiconductor lasers

A. Mohammed Mahbobzadeh; Marek Osinski

doi:10.1117/12.43791

1 July 1991 Novel distributed feedback structure for surface-emitting semiconductor lasers

A. Mohammed Mahbobzadeh, Marek Osinski

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43791
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

A novel distributed feedback structure for wavelength-resonant surface-emitting semiconductor lasers is proposed and demonstrated. Compared to earlier resonant-periodic-gain devices, the total thickness of the new structure can be considerably smaller while retaining the characteristic features of the resonant-periodic-gain active medium. Room-temperature cw and pulsed operation of first distributed-feedback resonant-periodic-gain AlGaAs/GaAs/AlAs laser is reported.

Citation Download Citation

A. Mohammed Mahbobzadeh and Marek Osinski "Novel distributed feedback structure for surface-emitting semiconductor lasers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43791

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