Optimization of strained layer InGaAs/GaAs quantum-well lasers

Richard J. Fu; Chi-Shain Hong; Eric Y. Chan; Dan J. Booher; Luis Figueroa

doi:10.1117/12.43798

1 July 1991 Optimization of strained layer InGaAs/GaAs quantum-well lasers

Richard J. Fu, Chi-Shain Hong, Eric Y. Chan, Dan J. Booher, Luis Figueroa

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43798
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

InGaAs/GaAs strained-layer quantum well (SQW) laser structures have been investigated for avionic applications requiring high-temperature performance. These lasers offer availability of wavelengths in the range of 0.9-1.1 micrometers for important applications in Er-doped fiber amplifiers and optoelectronic integrated circuits. For the first time, InGaAs/GaAs SQW lasers capable of cw operation up to 200 degree(s)C have been successfully demonstrated. The lasers show threshold current density of 200 A/cm2, differential quantum efficiency of 60%, output power of approximately equals 1 W for 50-micrometers oxide-stripe and 120 mW for 3-micrometers ridge- waveguide lasers, and characteristic temperature (TO) of 130-140K. In this paper, the optimization of the stripe width, orientation and cavity length for the laser performance have been studied. The characteristics of these devices are described. Measured I-V, L-I, spectrum, farfield pattern and reliability data are presented.

Citation Download Citation

Richard J. Fu, Chi-Shain Hong, Eric Y. Chan, Dan J. Booher, and Luis Figueroa "Optimization of strained layer InGaAs/GaAs quantum-well lasers", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43798

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