Progress of surface-emitting lasers in Japan

Mutsuo Ogura

doi:10.1117/12.43826

1 July 1991 Progress of surface-emitting lasers in Japan

Mutsuo Ogura

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43826
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

The present states of the vertical cavity surface emitting lasers (SELDs) in Japan conducted by the Tokyo Institute of Technology, Sanyo Electric Co. Ltd., Furukawa Electric Co. Ltd., Seiko-Epson Corp. and Electrotechnical Lab. are outlined. Most of the lasers use the semiconductive distributed Bragg reflector and buried heterostructure (BH) either for the active region or whole optical cavity. Combination of the SELD and thyristor by NEC Corp. for the optical functional device was also introduced. Lateral injection SELDs will be another choice for the multiple quantum well structure and reduction of the series resistance. Regrowth and processing techniques developed in Japan which may be applicable for the more optimized design of SELDs are also discussed.

Citation Download Citation

Mutsuo Ogura "Progress of surface-emitting lasers in Japan", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43826

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