Strained quantum-well leaky-mode diode laser arrays

T. H. Shiau; Shang Zhu Sun; Christian F. Schaus; Kang Zheng; G. Ronald Hadley; John P. Hohimer

doi:10.1117/12.43799

1 July 1991 Strained quantum-well leaky-mode diode laser arrays

T. H. Shiau, Shang Zhu Sun, Christian F. Schaus, Kang Zheng, G. Ronald Hadley, John P. Hohimer

Proceedings Volume 1418, Laser Diode Technology and Applications III; (1991) https://doi.org/10.1117/12.43799
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

A new type of diode laser array (denoted 'leaky-mode' or 'antiguided') has recently been reported. Despite their success, these devices are difficult to fabricate since they require a deep wet-chemical etch which must be accurately controlled. The authors report a new strained GaInAs quantum well device structure which is produced by etching a thin (0.12 micrometers ), transparent GaAs waveguide layer. These devices have demonstrated fundamental mode operation up to 2A (172 mW/facet at 1A) at 1% duty cycle pulsed condition and 700 mA (62.5 mW/facet) for cw operation.

Citation Download Citation

T. H. Shiau, Shang Zhu Sun, Christian F. Schaus, Kang Zheng, G. Ronald Hadley, and John P. Hohimer "Strained quantum-well leaky-mode diode laser arrays", Proc. SPIE 1418, Laser Diode Technology and Applications III, (1 July 1991); https://doi.org/10.1117/12.43799

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