Computer modeling of the dynamics of nanosecond laser annealing of amorphous thin silicon layers

Sergei P. Zhvavyi; Olga L. Sadovskaya

doi:10.1117/12.48129

1 December 1991 Computer modeling of the dynamics of nanosecond laser annealing of amorphous thin silicon layers

Sergei P. Zhvavyi, Olga L. Sadovskaya

Proceedings Volume 1440, Optical Radiation Interaction with Matter; (1991) https://doi.org/10.1117/12.48129
Event: Optical Radiation Interaction with Matter, 1990, Leningrad, Russian Federation

Abstract

Basic mechanisms of nanosecond laser annealing of ion-impl anted si licon layers are now well -known. It has been demonstrated1-4 that for the inci dent pulse energy density lower than the epitaxial anneal ing threshold, amorphous silicon C a-Si) is parti all y transformed into a course-grai ned polycrystalline silicon CCG p-Si) in the near-surfa ce regi on and a fine-grained polysilicon C FG p-Si) lying under i t. Formation of the FG p-Si and CG p-Si is caused by formati on of a hi ghl y supercooled melt Csl -Si) as a resul t of a-Si melting at a temperature T which is 250K lower than the melting temperature of monocryslalli nemili con C c-Si) T and subsequent crystallizati on. It has been assumed in refs. 3,4 mlhat the pri mary melt formed in the near -surface region as a result of laser irradiation crystallizes with the formati on of a CG p-Si layer. Since the latent heat of crys tal lization is hi gher than that of a-Si melting C L =0.7L ), under certain condi tions the released energy may cause melli g ofcthe a-Si lying deeper. Crystall ization of the secondary melt l eads to forma tion of FG p-Si and the rel eased energy causes melting of a-Si. Hence, as a result of melting at the leadi ng sl -Si/a-Si interface and crys tal lization at the traili ng FG p-Si/sl -Si interface, a self-support ing propagati on of the melted layer lak es place. However , this model of formati on of the CG p-Si and FG p-Si layers does not resol ve the question of the ini tial crystallizati on stage.

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Sergei P. Zhvavyi and Olga L. Sadovskaya "Computer modeling of the dynamics of nanosecond laser annealing of amorphous thin silicon layers", Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); https://doi.org/10.1117/12.48129

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KEYWORDS

Silicon

Amorphous silicon

Crystals

Annealing

Interfaces

Chromium

Computer simulations

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