Hot carrier photoeffects in inhomogeneous semiconductors and their applications to light detectors

Larisa P. Amosova; I. Ya. Marmur; Ya. A. Oksman; S. Ashmontas; Jonas Gradauskas; Edmundas Sirmulis

doi:10.1117/12.48178

1 December 1991 Hot carrier photoeffects in inhomogeneous semiconductors and their applications to light detectors

Larisa P. Amosova, I. Ya. Marmur, Ya. A. Oksman, S. Ashmontas, Jonas Gradauskas, Edmundas Sirmulis

Proceedings Volume 1440, Optical Radiation Interaction with Matter; (1991) https://doi.org/10.1117/12.48178
Event: Optical Radiation Interaction with Matter, 1990, Leningrad, Russian Federation

Abstract

The heating of free carriers by the infrared (IR) radiation or electric field increases the average energy of the carriers. This constitutes the physical basis for the observed photovoltage in semiconductor contact structures. In the present review the experiments carried out in recent years with semiconductor diodes and transistors are described. This allows the main properties of internal photoemission, photocapacity effect, and secondary carrier injection to be determined.

Citation Download Citation

Larisa P. Amosova, I. Ya. Marmur, Ya. A. Oksman, S. Ashmontas, Jonas Gradauskas, and Edmundas Sirmulis "Hot carrier photoeffects in inhomogeneous semiconductors and their applications to light detectors", Proc. SPIE 1440, Optical Radiation Interaction with Matter, (1 December 1991); https://doi.org/10.1117/12.48178

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