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1 July 1991 Backside-thinned CCDs for keV electron detection
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This paper presents preliminary results on the performance of n-channel, backside-thinned charge-coupled devices (CCDs) as electron-bombarded-semiconductor (EBS) imagers for the detection of 1-10 keV electrons. The devices exhibit average EBS gains ranging from approximately 50 at 1 keV to 1600 at 10 keV. Device radiation tolerance has been investigated by exposing normally-clocked devices to 6 keV electron doses up to 0.01 Coulombs/cm2. Room temperature pre- and post-irradiation results are presented for these key device parameters: full well capacity, dark current, and charge transfer efficiency (CTE). At the maximum dose of 0.01 Coulombs/cm2, full well capacity decreases 9 from an initial value of 680,000 e-, and dark current increases from 2 to approximately 50 nA/cm2. There are no measurable changes in large signal CTE up to the maximum dose. Radiation damage at energies other than 6 keV is estimated by measurement of the x-ray generation efficiency of silicon as a function of electron energy. Device stability after temperature cycling has been studied by subjecting packaged devices to vacuum bakes of 24 hours at 300 degree(s)C. Full well, CTE, EBS gain, and output amplifier performance are unchanged after the extended temperature cycle, while dark current decreases slightly by 15. In summary, these initial results indicate that the CCD can function as both an efficient and robust electron imager.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mihir K. Ravel and Alice L. Reinheimer "Backside-thinned CCDs for keV electron detection", Proc. SPIE 1447, Charge-Coupled Devices and Solid State Optical Sensors II, (1 July 1991);


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