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1 July 1991 Notch and large-area CCD imagers
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Abstract
A technique for improving the performance oflarge area high resolution Charge-Coupled Device (CCD) imagers will be described. Adding an additional doped channel down the center of a CCD register provides for charge confinement. This leads to improved charge transfer efficiency and resistance to radiation damage. Two dimenslonal theoretical analysis will be shown along with measured device performance.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Bredthauer, Jeff H. Pinter, James R. Janesick, and Lloyd B. Robinson "Notch and large-area CCD imagers", Proc. SPIE 1447, Charge-Coupled Devices and Solid State Optical Sensors II, (1 July 1991); https://doi.org/10.1117/12.45335
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