Al203 etch-stop layer for a phase-shifting mask

Isamu Hanyu; Mitsuji Nunokawa; Satoru Asai; Masayuki Abe

doi:10.1117/12.44833

1 July 1991 Al203 etch-stop layer for a phase-shifting mask

Isamu Hanyu, Mitsuji Nunokawa, Satoru Asai, Masayuki Abe

Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991) https://doi.org/10.1117/12.44833
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

On a phase-shifting mask, an etch-stop layer is a good way to repair the phase-shifter's defects without causing any phase error. The authors propose using Al2O2 for the etch-stop layer. Al2O3 was deposited by oxygen ion-beam assisted evaporation. The evaporated Al2O3 film showed several properties which are indispensable for an etch-stop layer: the high transparency at i-line and KrF wavelengths, and an etching selectivity of 270 for a SiO2 phase-shifting film. The effects of an etch-stop layer on the optical properties of a phase-shifting mask were also studied.

Citation Download Citation

Isamu Hanyu, Mitsuji Nunokawa, Satoru Asai, and Masayuki Abe "Al203 etch-stop layer for a phase-shifting mask", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44833

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