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1 July 1991 Impact of phase masks on deep-UV lithography
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Abstract
Deep-UV lithography is being brought on-line for use on 16 Mbit memory devices with 500 nm design rules. Samples of 64 Mbit memory cells are being tested with 400 nm design-rule deep-UV lithography. The recent revival of interest in the phasemask concept promises an extension of deep-UV lithography to below 300 nm design rules. This paper studies the impact of phasemasks on deep-UV lithography by: reviewing requirements being placed on the technology; reviewing the current capabilities of the technology; and reviewing the improvements offered by phasemask technology. Experimental data that was obtained using an etched phasemask on a deep-UV step-and-scan system is supplied. Based on this data, the limits of deep-UV lithography using 250 nm illumination are predicted.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry Sewell "Impact of phase masks on deep-UV lithography", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44780
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