Reduction of the standing wave effect in positive photoresist using an antireflection coating

Ranjana Mehrotra; Bhvanesh P. Mathur; Sunil Sharan

doi:10.1117/12.44808

1 July 1991 Reduction of the standing wave effect in positive photoresist using an antireflection coating

Ranjana Mehrotra, Bhvanesh P. Mathur, Sunil Sharan

Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991) https://doi.org/10.1117/12.44808
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

The standing wave effect in positive photoresist has been found to be drastically reduced by using a thin coating of silicon nitride between the resist and the silicon dioxide film deposited on silicon substrate. The process modeling has been carried out by adopting a method which is a natural extension of ANKAN, a computer program written for the exposure and development of a positive photoresist. The actual calculations have been performed for a line image exposure of AZ1350 photoresist by using the matrix formulation and diffraction limited system. The simulation allows the computation of resist profiles under a variety of experimental conditions. The analysis may be useful for a better linewidth control.

Citation Download Citation

Ranjana Mehrotra, Bhvanesh P. Mathur, and Sunil Sharan "Reduction of the standing wave effect in positive photoresist using an antireflection coating", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44808

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