Simulations of bar printing over a MOSFET device using i-line and deep-UV resists

Eytan Barouch; Uwe Hollerbach; Steven A. Orszag; Charles R. Szmanda; James W. Thackeray

doi:10.1117/12.44805

1 July 1991 Simulations of bar printing over a MOSFET device using i-line and deep-UV resists

Eytan Barouch, Uwe Hollerbach, Steven A. Orszag, Charles R. Szmanda, James W. Thackeray

Proceedings Volume 1463, Optical/Laser Microlithography IV; (1991) https://doi.org/10.1117/12.44805
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

Numerical simulations of printing of a bar in photoresist over a MOSFET gate using positive and negative, i-line and deep-UV resists are presented. The masks were chosen to produce the same nominal structure. The resist process was simulated in three separate phases: exposure, post-exposure bake, and development. Three-dimensional relief images of the printed bar are given for these cases.

Citation Download Citation

Eytan Barouch, Uwe Hollerbach, Steven A. Orszag, Charles R. Szmanda, and James W. Thackeray "Simulations of bar printing over a MOSFET device using i-line and deep-UV resists", Proc. SPIE 1463, Optical/Laser Microlithography IV, (1 July 1991); https://doi.org/10.1117/12.44805

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