Paper
1 July 1991 Characterization of wavelength offset for optimization of deep-UV stepper performance
Susan K. Jones, Bruce W. Dudley, Charles R. Peters, Mark D. Kellam, Edward K. Pavelchek
Author Affiliations +
Abstract
A combination of metrology techniques was employed to fine tune the wavelength setting of a 248 nm excimer laser stepper to optimize performance. Scanning electron microscopy was used to document local resolution, proximity effects, and astigmatism, while GCA SMARTSETR and electrical resistance techniques were used to examine full field effects. Using the combined metrology methodologies, the authors documented the decrease in proximity effect, improvement in resolution, and increase in absolute lens distortion with negative shifts in laser wavelength setting, with a slight differential in the setting required to minimize horizontal versus vertical proximity effect and astigmatism. A wavelength offset of -2.3 angstroms from the nominal stepper setup wavelength was determined to be the best operating wavelength for these applications.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Susan K. Jones, Bruce W. Dudley, Charles R. Peters, Mark D. Kellam, and Edward K. Pavelchek "Characterization of wavelength offset for optimization of deep-UV stepper performance", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44465
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KEYWORDS
Metrology

Distortion

Monochromatic aberrations

Scanning electron microscopy

Semiconducting wafers

Inspection

Photomasks

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