Multiple scattered electron-beam effect in electron-beam lithography

Norio Saitou; Teruo Iwasaki; Fumio Murai

doi:10.1117/12.47355

1 August 1991 Multiple scattered electron-beam effect in electron-beam lithography

Norio Saitou, Teruo Iwasaki, Fumio Murai

Author Affiliations +

Proceedings Volume 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing; (1991) https://doi.org/10.1117/12.47355
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

The multiple electron beam scattering effect is studied experimentally in an electron optical column. This effect causes a serious problem on the critical dimension of LSI pattern when the whole area of a wafer is exposed to an electron beam. This paper discusses the quantitative analysis and a method of reducing this effect.

Citation Download Citation

Norio Saitou, Teruo Iwasaki, and Fumio Murai "Multiple scattered electron-beam effect in electron-beam lithography", Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); https://doi.org/10.1117/12.47355

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