Bilayer resist system utilizing alkali-developable organosilicon positive photoresist

Kazuo Nate; Akiko Mizushima; Hisashi Sugiyama

doi:10.1117/12.46371

1 June 1991 Bilayer resist system utilizing alkali-developable organosilicon positive photoresist

Kazuo Nate, Akiko Mizushima, Hisashi Sugiyama

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46371
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

A bi-layer resist system utilizing an alkali-developable organosilicon positive photoresist (OSPR) has been developed. The composite prepared from an alkali-soluble organosilicon polymer, poly(p- hydroxybenzylsilsesquioxane) and naphthoquinone diazide becomes a alkali-developable positive photoresist which is sensitive to UV (i line - g line) region, and exhibited high oxygen reactive ion etching (O2 RIE) resistance. The sensitivity and the resolution of OSPR are almost the same as those of conventional novolac-based positive photoresists. The bi-layer resist system utilizing OSPR as the top imaging layer gave fine patterns of underlayers with high aspect ratio easily.

Citation Download Citation

Kazuo Nate, Akiko Mizushima, and Hisashi Sugiyama "Bilayer resist system utilizing alkali-developable organosilicon positive photoresist", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46371

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