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1 June 1991 Negative chemical amplification resist systems based on polyhydroxystyrenes and N-substituted imides or aldehydes
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Abstract
Aqueous base developable negative deep UV resist systems composed of phenolic resins, monofunctional latent electrophiles, and a sulfonium salt photochemical acid generator are described. This study was carried out to see whether attachment of a bulky substituent onto the phenolic group via C- or O-alkylation reduces the dissolution rate of the phenolic resin in aqueous base to provide negative images even when no crosslinking is involved in the mechanism. The latent electrophiles selected are N-hydroxymethyl and N-aceotxymethylimides as well as high- boiling aldehydes. Our matrix resins are para-, meta-, and ortho-isomers of polyvinylphenol and copolymers of p-hydroxystyrene.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Ito, Klaas Schildknegt, and Eugene A. Mash "Negative chemical amplification resist systems based on polyhydroxystyrenes and N-substituted imides or aldehydes", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46389
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