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1 June 1991 Nonmetallic acid generators for i-line and g-line chemically amplified resists
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Abstract
Here we report two novel nonmetallic acid generators, derived from N- hydroxy-2,3-diphenylmaleimide, which absorb in the Deep UV and Near UV regions and do not require sensitization by additives. We have formulated a base developable positive tone resist containing these acid generators and have demonstrated 0.6 micrometers resolution on g-line and i- line steppers with sensitivity less than 50 mJ/cm2. We will show data characterizing the new materials and describe lithographic results relating to the performance of the resist.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William R. Brunsvold, Warren Montgomery, and Bao Hwang "Nonmetallic acid generators for i-line and g-line chemically amplified resists", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46385
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