Evaluation of a high-resolution negative-acting electron-beam resist GMC for photomask manufacturing

Wen-Chih Chen; Anthony E. Novembre

doi:10.1117/12.46759

1 March 1991 Evaluation of a high-resolution negative-acting electron-beam resist GMC for photomask manufacturing

Wen-Chih Chen, Anthony E. Novembre

Author Affiliations +

Proceedings Volume 1496, 10th Annual Symp on Microlithography; (1991) https://doi.org/10.1117/12.46759
Event: 10th Annual Symposium on Microlithography, 1990, Sunnyvale, CA, United States

Abstract

As mask and reticle designs continue to evolve in complexity and resolution requirements, maskmakers are investigating what advantages negative acting electron beam resists may have in meeting these requirements. One candidate is Poly (glycidyl methacrylate-co-3- chlorostyrene), GMC, which is an advanced negative resist used for the purpose of photomask fabrication. In this paper, a statistically designed experiment will be described in which GMC resist was evaluated for use on the MEBES system. Variables explored included exposure dosage, chrome etch time, resist descum and strip time. The effects of these variables on defect density, critical dimension (CD) size and uniformity will be presented.

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Wen-Chih Chen and Anthony E. Novembre "Evaluation of a high-resolution negative-acting electron-beam resist GMC for photomask manufacturing", Proc. SPIE 1496, 10th Annual Symp on Microlithography, (1 March 1991); https://doi.org/10.1117/12.46759

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