GaAs MESFET For High-Speed Optical Detection

J. J. Pan

doi:10.1117/12.956715

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21 December 1978 GaAs MESFET For High-Speed Optical Detection

J. J. Pan

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Proceedings Volume 0150, Laser and Fiber Optics Communications; (1978) https://doi.org/10.1117/12.956715
Event: 22nd Annual Technical Symposium, 1978, San Diego, United States

Abstract

The microwave, low-noise GaAs-metal-semiconductor, field-effect transistor (MESFET) has a cutoff frequency higher than 80 GHz and possesses a good optical responsiveness over a very wide spectral range, from visible to near-infrared wavelengths. The drain-current variation of the MESFET is proportional to the input optic intensity. If the light is modulated, MESFET detects the high-speed subcarrier. Besides the low-noise and amplification-gain advantages, the MESFET photodetector operates at a low bias voltage, normally, below 6 V. The common-gate configuration at zero drain voltage also can function in a photocapacitive mode in which the capacitance changes with the change in polarized light intensity. The S-parameter of the device has been characterized up to Ku-band. The high-frequency optical receiver is ready to be designed and optimized using this charaterization. For high-speed fiber-optic communications, the monolithic receiver, the ILD driver, and the low-cost repeater all can be fabricated by using the MESFET's.

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J. J. Pan "GaAs MESFET For High-Speed Optical Detection", Proc. SPIE 0150, Laser and Fiber Optics Communications, (21 December 1978); https://doi.org/10.1117/12.956715

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