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1 September 1991 Hot carrier silicon phototransistor
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Abstract
The photoelectric characteristics of silicon phototransistors are investigated. The device consists of three regions with different types of conductivity. The operation of the phototransistor is based on the hot carrier emission from the emitter into the base under IR laser irradiation. The current-voltage measurements on the emitter-base junction show that photo-induced current increases with the increase of forward bias voltage and decreases when reverse bias is applied. The characteristics of the collector photocurrent versus the collector- base voltage in the common-base configuration are very similar to static collector current vs the collector voltage characteristics of an ordinary bipolar transistor. Furthermore, the collector photocurrent increases with an exponential law when the emitter-base junction is forward biased.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Steponas P. Asmontas, Jonas Gradauskas, and Edmundas Sirmulis "Hot carrier silicon phototransistor", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); https://doi.org/10.1117/12.47155
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