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1 September 1991 Magnetoconcentration nonequilibrium IR photodetectors
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Abstract
The analysis of a magneto-concentration effect carrier-depleted IR photodetector is reported. The device is a lightly doped narrow-gap photoconductor with a high backside surface recombination velocity, placed in a magnetic field. Due to action of the Lorentz force, the carrier concentration in the most parts of the device is highly reduced. As a result the I-V characteristics exhibit saturation and negative dynamic resistivity. The Auger generation and recombination processes are highly suppressed, resulting in a decrease of noise current. This makes it possible to improve dramatically the performance of IR devices. For example, the background limited performance is predicted for 10.6 micrometers (Hg,Cd)Te devices operated at 230-250 K.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jozef Piotrowski and Zoran G. Djuric "Magnetoconcentration nonequilibrium IR photodetectors", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); https://doi.org/10.1117/12.47174
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