Molecular beam epitaxy of CdTe and HgCdTe on large-area Si(100)

R. Sporken; M. D. Lange; Jean-Pierre Faurie

doi:10.1117/12.47157

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1 September 1991 Molecular beam epitaxy of CdTe and HgCdTe on large-area Si(100)

R. Sporken, M. D. Lange, Jean-Pierre Faurie

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Proceedings Volume 1512, Infrared and Optoelectronic Materials and Devices; (1991) https://doi.org/10.1117/12.47157
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands

Abstract

The current status of molecular beam epitaxy (MBE) of CdTe and HgCdTe on Si(100) is reviewed. CdTe and HgCdTe grow in the (111)B orientation on Si(100); monocrystalline films with two domains are obtained on most nominal Si(100) substrates, single domain films are grown on misoriented substrates and on nominal Si(100) preheated to 900-950 degree(s)C. Double-crystal x-ray rocking curves (DCRCs) with full-width at half-maximum (FWHM) as low as 110 arcsec are reported for HgCdTe on silicon; these layers are n-type, and electron mobilities higher than 5 X 104 cm2V-2s-1 are measured at 23 K for x equals 0.26. Excellent thickness and composition uniformity is obtained: standard deviation of the CdTe thickness 0.4% of the average thickness on 2-in. and 2.3% on 5-in., standard deviation of the Cd concentration in the HgCdTe layers 0.6% of the average concentration on 3-in. and 2.4% on 5-in. First results regarding growth of CdTe on patterned Si substrates are also reported.

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R. Sporken, M. D. Lange, and Jean-Pierre Faurie "Molecular beam epitaxy of CdTe and HgCdTe on large-area Si(100)", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); https://doi.org/10.1117/12.47157

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