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1 September 1991 New semiconductor material A1xInAsySb/InAs: LPE synthesis and properties
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Abstract
The phase diagram of the quaternary AlInAsSb system has been investigated. These data have been used for LPE growth of the AlxIn1-xAsySb1-y solid solutions lattice-matched to InAs (with Al mole percentage in the range 0.0-0.08). A band gap was determined for this material in dependence on the composition by photoluminescence measurements. The band gap of the solid solution in the investigated range of composition corresponds to a wavelength from 3 micrometers (x equals 0.0, Eg equals 0.414 eV) to 2.5 micrometers (x equals 0.08, Eg equals 0.49 eV).
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. A. Charykov, Alexandr M. Litvak, Konstantin D. Moiseev, and Yury P. Yakovlev "New semiconductor material A1xInAsySb/InAs: LPE synthesis and properties", Proc. SPIE 1512, Infrared and Optoelectronic Materials and Devices, (1 September 1991); https://doi.org/10.1117/12.47163
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