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1 August 1991 Preparation of SiO2 film utilizing equilibrium reaction in aqueous solution
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Proceedings Volume 1513, Glasses for Optoelectronics II; (1991)
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands
It has been reported in previous works on the LPD (liquid phase deposition) method that SiO2 film deposition could be made by utilizing the chemical transition from supersaturation to saturation in silica dissolution in H2SiF6 aqueous solution. In this study, the supersaturated state was obtained and maintained by employing the dependence of silica solubility on H2SiF6 solution temperature without a reaction initiator. As for the influence of the process parameters on SiO2 film properties, it came into notice that a dense film structure was obtained in the deposition at higher solution temperature (around 60 degree(s)C). As a result, transparent and crack-free thick SiO2 film over 10 microns was obtained by this advanced LPD method.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Kawahara, Y. Sakai, Takuji Goda, Akihiro Hishinuma, and Kazuo Takemura "Preparation of SiO2 film utilizing equilibrium reaction in aqueous solution", Proc. SPIE 1513, Glasses for Optoelectronics II, (1 August 1991);


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