S-parameter measurements of quantum-well devices

Olga Boric

doi:10.1117/12.2301472

1 December 1990 S-parameter measurements of quantum-well devices

Olga Boric

Proceedings Volume 1514, 15th International Conference on Infrared and Millimeter Waves; 15141Q (1990) https://doi.org/10.1117/12.2301472
Event: 15th International Conference on Infrared and Millimeter Waves, 1990, Orlando, FL, United States

Abstract

A technique has been developed for making 5-parameter measurements of whisker contacted quantum-well diodes with an HP 8510B automatic network analyzer. Special mounts with K connectors were designed to enable measurements up to 20 GHz. Several different quantum-well diodes were succesfully measured. The voltage dependent conductance and capacitance were calculated from the reflection coefficient of each device. These are the first reported 5-parameter measurements in the negative differential resistance (NDR) region of quantum-well devices.

Citation Download Citation

Olga Boric "S-parameter measurements of quantum-well devices", Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 15141Q (1 December 1990); https://doi.org/10.1117/12.2301472

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