Ohmic and Schottky contacts to GaSb

Tong S. Wu; Yan-Kuin Su; Fuh Shyang Juang; N. Y. Li; K. J. Gan

doi:10.1117/12.47230

1 November 1991 Ohmic and Schottky contacts to GaSb

Tong S. Wu, Yan-Kuin Su, Fuh Shyang Juang, N. Y. Li, K. J. Gan

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47230
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The ohmic contact properties of Ag/AuGeNi/n-GaSb and AuGeNi/n-GaSb systems were investigated in this paper by measuring the barrier height and specific contact resistance with various sintering temperatures. The lowest specific contact resistance was about 8 X 10^-3 - 8 X 10^-4 cm² for the Ag/AuGeNi/n-GaSb contact system when the sintering temperature was 400 degree(s)C for 2 min. Rutherford backscattering spectroscopy (RBS) was also used to study the interface between Ag/AuGeNi and GaSb during heat treatment. Pd/n-GaSb Schottky contacts have been studied experimentally before and after temperature annealing. I-V characteristics, Auger electron spectroscopy (AES), RBS, and x- ray diffraction patterns were used to determine and identify electrical performance of Pd/n- GaSb Schottky diodes. When the annealing temperature is increased to 450 degree(s)C, the rectifying property becomes bad. In this case, Pd interdiffusion and Ga, Sb out-diffusion to form Ga₅Pd compound is very serious.

Citation Download Citation

Tong S. Wu, Yan-Kuin Su, Fuh Shyang Juang, N. Y. Li, and K. J. Gan "Ohmic and Schottky contacts to GaSb", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47230

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