Recording and erasing characteristics of GeSbTe-based phase change thin films

Lisong Hou; Chuanxing Zhu; Donghong Gu

doi:10.1117/12.47216

1 November 1991 Recording and erasing characteristics of GeSbTe-based phase change thin films

Lisong Hou, Chuanxing Zhu, Donghong Gu

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47216
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

GeSbTe-based thin films are prepared by both evaporation and sputtering methods. By the optimization of the film thickness the erasing (crystallization) time of some films is less than 100 ns and the contrast can be as high as 25%. Both the amorphous and the crystalline states of the unprotected films are stable up to 10⁴ writing/erasing cycles. The employment of a fourth element significantly improves the cycling stability up to 10⁵ times.

Citation Download Citation

Lisong Hou, Chuanxing Zhu, and Donghong Gu "Recording and erasing characteristics of GeSbTe-based phase change thin films", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47216

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available