Paper
1 November 1991 (Sb2Se3)1-xNix alloy thin films and its application in erasable phase change optical recording
Songsheng Xue, Zhengxiu Fan, Fuxi Gan
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47256
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
Reported here are the experimental results about Ni-doped Sb2Se3 phase change recording thin films prepared by DC & RF magnetron co-sputtering. It is found that doping a small percentage of nickel (Ni) into Sb2Se3 thin films have the effect to increase the films recording sensitivity and decrease the polycrystalline grain size about one order of magnitude after 8.9 at% of Ni is doped. The sample's static test for erasable optical recording shows that using 20 mW, 200 ns, or 15 mW, 200 ns laser pulses, a recoding bit can be written or erased on the film, thus Ni-doped Sb2Se3 media have the potential for practical rewritable recording.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Songsheng Xue, Zhengxiu Fan, and Fuxi Gan "(Sb2Se3)1-xNix alloy thin films and its application in erasable phase change optical recording", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47256
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KEYWORDS
Thin films

Nickel

Optical recording

Crystals

Physics

Sputter deposition

Antimony

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