Characterization of hydrogenated amorphous silicon carbide films

S. Uthanna

doi:10.1117/12.57018

1 February 1992 Characterization of hydrogenated amorphous silicon carbide films

S. Uthanna

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57018
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

A-SiC:H films were prepared by magnetron sputtering of silicon in an atmosphere of argon, hydrogen and acetylene gas on c-Si and glass substrates maintained at a temperature of 250 degree(s)C. It was indicated from the FTIR spectroscopy that the vibrational modes of SiC- and SiHm-shifted to higher energies due to the incorporation of carbon in a-Si:H network. The decrease of dark and photo conductivity with the carbon content was attributed to the additional defects produced by alloying of carbon in the a-Si:H.

Citation Download Citation

S. Uthanna "Characterization of hydrogenated amorphous silicon carbide films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57018

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