Thin films of doped and undoped Pbo.8Sno.2Te were grown by flash evaporation onto Kbr and mica substrates kept at 400 degree(s)C. In order to grow doped films, the polycrystalline charge containing different concentrations of indium, thallium, bismuth, and antimony was used. The dc conductivity and Hall coefficient measurements were made on these films. Indium and bismuth doped films were found to be n-type, whereas undoped, thallium and antimony doped films were found to be p-type.
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