Photostable amorphous-silicon films by low-pressure chemical vapour deposition

K. K. Sharma; Claudio Manfredotti

doi:10.1117/12.56990

1 February 1992 Photostable amorphous-silicon films by low-pressure chemical vapour deposition

K. K. Sharma, Claudio Manfredotti

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56990
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Photostable hydrogenated amorphous-silicon films have been deposited by disilane decomposition in a quartz reactor 2 m in length and 5 in. in diameter. A deposition temperature of around 420 degree(s)C, pressure in the interval of 5 to 10 Torr, and gas holding time around 250 sec are the most appropriate parameters to deposit fairly good quality films having density states ranging from 10¹⁶ to 10¹⁷ cm^-3 eV^-1 and Urbach's tail from 70 meV to 100 meV.

Citation Download Citation

K. K. Sharma and Claudio Manfredotti "Photostable amorphous-silicon films by low-pressure chemical vapour deposition", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56990

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