Study on flash-evaporated tin selenide films

Taminder Singh; Surinder Kaur; R. K. Bedi

doi:10.1117/12.57007

1 February 1992 Study on flash-evaporated tin selenide films

Taminder Singh, Surinder Kaur, R. K. Bedi

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57007
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Tin selenide films have been prepared by flash evaporation technique onto glass substrates kept at different temperatures. An appreciable increase in grain size has been observed with increase in substrate temperature, grain size as large as 0.43 m has been obtained for the films deposited at 523 K. Observations reveal that SnSe films appear to be p-type and poly-crystalline in nature. The activation energy shows an abrupt increase beyond substrate temperature of 523 K, indicating poor crystallinity and short range order. The mobility and carrier concentration of SnSe films increases with increase in temperature.

Citation Download Citation

Taminder Singh, Surinder Kaur, and R. K. Bedi "Study on flash-evaporated tin selenide films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57007

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